30 GHz static frequency divider using a0.2 µm AlGaAs/GaAs/AlGaAs HEMT technology
- 23 November 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (24) , 2111-2112
- https://doi.org/10.1049/el:19951430
Abstract
A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 µm gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 Ω. The output signals are differential with both internal load resistances at 50 Ω.Keywords
This publication has 2 references indexed in Scilit:
- An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistorsIEEE Journal of Solid-State Circuits, 1993
- High-frequency equivalent circuit of GaAs FETs for large-signal applicationsIEEE Transactions on Microwave Theory and Techniques, 1991