Rapid temperature variation of hopping conduction in GaAs low-temperature bolometers
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 685-687
- https://doi.org/10.1063/1.94072
Abstract
The very rapid temperature dependence between 1 and 4 K of the resistivity of GaAs bolometers was found to follow ρ∼exp(AT−1/4). The most plausible attribution of this behavior was to variable range, single particle, hopping, and our data were consistent with the model of Apsley and Hughes.Keywords
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