Low frequency noise and screening effects in AlGaN/GaNHEMTs
- 26 November 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (24) , 2357-2359
- https://doi.org/10.1049/el:19981597
Abstract
Low frequency noise has been studied in Al0.15Ga0.85N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter αH and VGS was found. A Hooge parameter as low as 5 × 10-4 was obtained at VGS = 0 V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties.Keywords
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