Molecular-beam epitaxial growth of pulse-doped pseudomorphic GaAlAs/GaInAs transistors with high gain and low noise properties
- 1 May 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (3) , 397-401
- https://doi.org/10.1116/1.585033
Abstract
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