Recombination in Semiconductors by a Light Hole Auger Transition
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 19 (2) , 577-586
- https://doi.org/10.1002/pssb.19670190209
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Derivation of sum rules and hypervirial theorems by differentiationProceedings of the Physical Society, 1965
- Über die Bloch‐Darsteller der Elektron‐Elektron‐WechselwirkungPhysica Status Solidi (b), 1964
- Overlap Integrals for Bloch ElectronsProceedings of the Physical Society, 1963
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Infrared Absorption and Valence Band in Indium AntimonidePhysical Review B, 1960
- Recombination Processes in-Type Indium AntimonidePhysical Review B, 1959
- Electron impact ionization in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Auger effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957