A model for high-field conduction in SIMOX buried oxides
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
High-field electrical conduction through SIMOX buried oxide exhibits distinctly different characteristics from thermal SiO/sub 2/. A quantitative model for high-field SIMOX BOX conduction is proposed which provides an explanation for both the earlier onset of BOX Fowler-Nordheim tunneling current as well as its pronounced polarity dependence. This model is based on barrier-height-lowering due to BOX silicon-rich nonstoichiometry and FN-cathode electric-field enhancement due to silicon islands within the buried oxide.Keywords
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