Pseudo‐Exciton Effect in the Schottky‐Barrier Electroreflectance
- 1 June 1982
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 111 (2) , 461-468
- https://doi.org/10.1002/pssb.2221110206
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectanceJournal of Vacuum Science and Technology, 1980
- Analysis of modulation spectra of stratified mediaJournal of the Optical Society of America, 1973
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAsPhysical Review Letters, 1972
- Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum StatesPhysical Review B, 1970
- Combined Investigation of Nonuniform-Field Electroreflectance and Surface Galvanomagnetic Properties in GermaniumPhysical Review B, 1969
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966
- Dielectric Constant of a Semiconductor in an External Electric FieldPhysical Review B, 1966
- Reflection of Sound Waves from Transition LayersThe Journal of the Acoustical Society of America, 1966