Alloy composition and flow rates in Ga x In 1−x As y P 1−y lattice-matched to InP grown by MO-CVD

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Abstract
Relations between alloy compositions and flow rates of sources in TEG/TEI/AsH3/PH3/H2 LP-MOCVD system for the growth of GaInAsP/InP were experimentally studied under lattice-matching and high crystalline quality enough for laser oscillation. A proportional relationship was observed between the alloy of Ga/In and source of TEG/TEI, As/P and AsH3/PH3 over the bandgap wavelength of 1.3–1.6 μm.