LPE Growth and Luminescence of In1-xGaxPyAs1-y on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV
- 1 September 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (9) , L505
- https://doi.org/10.1143/jjap.19.l505
Abstract
An LPE growth method of In1-x Ga x P y As1-y layers on (1, 0, 0) GaAs is described over a wide range of band-gap energy. Melt compositions for lattice-matched growth of these layers are given. Photoluminescence spectra of the layers are reported, and their spectral shape and luminescent-peak energies are discussed in comparison with In1-x Ga x P y As1-y grown on InP.Keywords
This publication has 8 references indexed in Scilit:
- Lattice-Matched LPE Growth of In1-xGaxP1-yAsyLayers on (100) GaAs SubstratesJapanese Journal of Applied Physics, 1980
- Spectral Half-Width of Spontaneous Emission of GaInAsP Lattice-Matched to InPJapanese Journal of Applied Physics, 1979
- Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substratesJournal of Applied Physics, 1978
- Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctionsApplied Physics Letters, 1976
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxPJournal of Crystal Growth, 1974
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965