Buried-channel GaAs MESFET's with frequency-independent output conductance

1 March 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (3) , 88-89
https://doi.org/10.1109/edl.1987.26561

Abstract

The output conductance of GaAs MESFET's is shown to be a function of frequency and to have a well-defined temperature dependence. This behavior is in agreement with other reports of the behavior of GaAs ion-implanted MESFET's. The output conductance of buried-channel GaAs MESFET's is shown to be independent of frequency and temperature. This is an important improvement in the output characteristics with many implications for GaAs analog and digital circuits.

Keywords

GALLIUM ARSENIDE
MESFETS
BATTERY CHARGE MEASUREMENT
TEMPERATURE DEPENDENCE
TEMPERATURE SENSORS
SIGNAL GENERATORS
AMPLIFIERS
DIGITAL CIRCUITS
FREQUENCY DEPENDENCE
TRANSCONDUCTANCE