On the geometrical factor of lateral p-n-p transistors
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (1) , 295-297
- https://doi.org/10.1109/T-ED.1980.19855
Abstract
A simple analytical expression has been derived for the geometrical factor of lateral p-n-p transistors and is compared with the two-dimensional computer solution by Chou. Reasonable agreement has been found between the two analyses when (basewidth at the surface/junction depth) ≳ 0.5 and (epitaxial layer thickness/junction depth)\lsim 3.Keywords
This publication has 0 references indexed in Scilit: