Defect Formation in GaAs by Subthreshold Energy (0.2–3 keV) Electron Irradiation
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12R) , 2430-2435
- https://doi.org/10.1143/jjap.28.2430
Abstract
Defects formed in epitaxially grown GaAs after low energy (0.2–3 keV) electron irradiation were investigated by deep level transient spectroscopy (DLTS) and compared with high energy (1–5 MeV) electron irradiation induced defects. The results indicated that electrically active defects could be created at electron irradiation energies of as low as 0.2 keV. These defects are formed close to the GaAs surface, and a higher than usual DLTS forward bias filling pulse was required to detect them. Further, the properties of defects formed at irradiation energies of 0.2–3 keV correspond well with those of MeV energy range electron irradiation induced defects, but their introduction rates were much lower.Keywords
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