A D.T.A. study of the semiconductor-metallic transition temperature in V 1−x W x O 2, 0 ≤ x ≤ 0.067
- 31 December 1969
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 4 (12) , 881-886
- https://doi.org/10.1016/0025-5408(69)90044-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Growth and electrical properties of vanadium dioxide single crystals containing selected impurity ionsJournal of Physics and Chemistry of Solids, 1969
- On the Phase Transformation of VO2Japanese Journal of Applied Physics, 1967
- Shift of Transition Temperature of Vanadium Dioxide CrystalsJapanese Journal of Applied Physics, 1967
- The Phase Transition in VO2Journal of the Physics Society Japan, 1967
- A New Phase Appearing in Metal-Semiconductor Transition in VO2Journal of the Physics Society Japan, 1966
- Direct Cation- -Cation Interactions in Several OxidesPhysical Review B, 1960