Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

12 October 1998

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 73 (15) , 2140-2142
https://doi.org/10.1063/1.122403

Abstract

We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D’yakonov–Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology.

Keywords

This publication has 14 references indexed in Scilit:

Room-Temperature Spin Memory in Two-Dimensional Electron Gases
Science, 1997
Spin Gratings and the Measurement of Electron Drift Mobility in Multiple Quantum Well Semiconductors
Physical Review Letters, 1996
Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wells
Applied Physics Letters, 1996
Hole spin relaxation in n-modulation doped quantum wells
Solid State Communications, 1995
Investigation of excitonic saturation by time-resolved circular dichroism in GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells
Physical Review B, 1994
Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
Japanese Journal of Applied Physics, 1993
Observation of extremely long electron-spin-relaxation times in p-type δ-doped GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As double heterostructures
Physical Review B, 1993
Spin-flip scattering times in semiconductor quantum wells
Surface Science, 1992
New Method to Measure the Relativistic Doppler Shift: First Results and a Proposal
Physical Review Letters, 1985
Spin relaxation of conduction electrons in GaAs
Solid State Communications, 1976