Sputtering Behavior of a Magnetron Glow Discharge Device

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Abstract
The sputtering characteristics of a previously described dc planar magnetron glow discharge device are described for six different alloys and metals. Low-pressure linear etch rates of Cu-alloyed Al, steel, high-purity Cu, leaded brass, Al-alloyed Zn, and high-purity Ag and Au are found to be higher than those achieved with other planar magnetron devices. Direct mass-loss measurements, made from 0.0007 to 4.0 Torr pressure of Ar support gas at plasma currents varying from 50 to 400 mA, show that mass loss rates are generally greatest for the highest-atomic-number species at the highest currents and lowest pressures. Comparison of mass loss rates in pure Ar and 1/1 Ar/CF4 at low pressure shows enhancement of mass loss rates for Al and Ag in the mixture, but reduction of mass loss rates for Cu, brass, Zn, and Au in the mixture. Addition of CF4 to the Ar support gas results in significant quenching of numerous spectral features at both high and low pressures.