Integrated Schottky-diode clamp for transistor storage time control

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (2) , 232-233
https://doi.org/10.1109/PROC.1968.6252

Abstract

Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.

Keywords

CLAMPS
SCHOTTKY DIODES
SILICON
LAGRANGIAN FUNCTIONS
SCHOTTKY BARRIERS
VOLTAGE
CAPACITANCE
DAMPING
ASYMPTOTIC STABILITY
DIFFERENTIAL EQUATIONS

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