Properties of ZnSxSe1−x–Zn1−yCdySe quantum well structures
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 909-911
- https://doi.org/10.1116/1.586150
Abstract
Molecular‐beam epitaxy has been employed to grown ZnSxSe1−x–Zn1−yCdySe multilayers. Double heterostructures consisting of a multiple quantum well structure of ZnSxSe1−x–Zn1−yCdySe sandwiched between ZnSxSe1−x have also been fabricated. Photopumped stimulated emission has been observed from these structures. In addition, double heterostructures with n‐type and p‐type ZnSxSe1−x cladding layers emit bright blue electroluminescence at 2.601 eV (476 nm) at room temperature.Keywords
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