A heterojunction bipolar transistor with separate carrier injection and confinement
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1844-1846
- https://doi.org/10.1109/16.34252
Abstract
A heterojunction bipolar transistor (HBT) structure in which the wide-gap material serves to confine minority carriers only while the injection of carriers into the base is controlled by a homojunction is discussed. This structure offers several advantages over conventional HBTs, including improved electron injection efficiency without bandgap grading. The thickness of the narrow-gap emitter has to be optimized in order to achieve a good confinement effect. The concept can be applied to other HBTs.link_to_subscribed_fulltexKeywords
This publication has 8 references indexed in Scilit:
- Carrier confinement photoconductive detectorApplied Physics Letters, 1988
- Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistorsIEEE Transactions on Electron Devices, 1987
- InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus ICcharacteristicIEEE Electron Device Letters, 1986
- A thermionic-diffusion model of polysilicon emitterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Base doping effects in InGaAs/InP double heterostructure bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- (Ga,Al)As/GaAs bipolar transistors for digital integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957