Quantum cascade laser: An intersub-band semiconductorlaser operating above liquid nitrogen temperature
- 26 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (11) , 865-866
- https://doi.org/10.1049/el:19940605
Abstract
A unipolar intersub-band semiconductor laser operating above liquid nitrogen temperature at 4.3 µm wavelength is reported. The measured optical power in pulsed operation is 30 mW at 102 K and the slope efficiency 0.1 W/A. Strong line-narrowing above threshold and well resolved longitudinal modes are observed up to 125 K. This new light source, called the quantum cascade laser, is based on sequential photon emission in a staircase/coupled quantum well AlInAs/GaInAs structure grown by MBE and its wavelength can be tailored in an extremely wide region.Keywords
This publication has 4 references indexed in Scilit:
- Quantum Cascade LaserScience, 1994
- Quantum-well intersub-band electroluminescent diode at λ = 5μmElectronics Letters, 1993
- Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodesApplied Physics Letters, 1984
- Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratioIEEE Transactions on Electron Devices, 1983