Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperatures
- 7 October 1974
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 7 (19) , L353-L355
- https://doi.org/10.1088/0022-3719/7/19/001
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of siliconJournal of Physics and Chemistry of Solids, 1974
- Peaked structure in field-effect mobility of silicon MOS transistors at very low temperaturesApplied Physics Letters, 1973