Thermalization and recombination in amorphous semiconductors
- 31 October 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 40 (1) , 85-89
- https://doi.org/10.1016/0038-1098(81)90717-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Optical Studies of Excess Carrier Recombination in-Si: H: Evidence for Dispersive DiffusionPhysical Review Letters, 1980
- Photoinduced Optical Absorption in Amorphous:HPhysical Review Letters, 1979
- Time-Resolved Optical Absorption and Mobility of Localized Charge Carriers in -Physical Review Letters, 1979
- Dispersive (non-Gaussian) transient transport in disordered solidsAdvances in Physics, 1978
- Multiple-trapping model of anomalous transit-time dispersion inPhysical Review B, 1977
- Theory of trap-controlled transient photoconductionPhysical Review B, 1977
- Monte Carlo simulation of anomalous transit-time dispersion of amorphous solidsPhysical Review B, 1977
- Time-dependent electrical transport in amorphous solids:Physical Review B, 1977
- Stochastic Problems in Physics and AstronomyReviews of Modern Physics, 1943