Optical sampling of GHz charge density modulation in silicon bipolar junction transistors

16 July 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (15) , 783-784
https://doi.org/10.1049/el:19870555

Abstract

We report the use of optical sampling employing a gain-switched 1.3μm semiconductor laser to observe charge density modulation in a 1.5μm x 5μm emitter silicon BJT. The overall system bandwidth is 8 GHz. The device under test is switched at frequencies from 100 MHz to 2.5 GHz.

Keywords

OPTICAL SAMPLING
100 MHZ TO 2.5 GHZ
8 GHZ
OVERALL SYSTEM BANDWIDTH
CHARGE DENSITY MODULATION
SI TRANSISTORS
5 MICRON
1.3 MICRON

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