The Fundamental Behavior of High-Speed Fuses for Protecting Silicon Diodes and Thyristors
- 1 September 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industrial Electronics and Control Instrumentation
- Vol. IECI-16 (2) , 125-133
- https://doi.org/10.1109/TIECI.1969.230429
Abstract
The fundamental problem in applying fuses for the protection of semiconductor devices is that of ensuring that the fault energy let-through of the fuse comes within the withstand of the device under the circumstances in which both are used in service. Great progress has been made during the last few years towards this end but more study is urgently needed.Keywords
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