Application of micro-airbridge isolation in high speed HBT fabrication

7 January 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (1) , 26-27
https://doi.org/10.1049/el:19930017

Abstract

A new selfaligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabrication process is presented, featuring a deep wet etching that undercuts the base and the emitter interconnects, and forms micro-airbridges for device isolation. The advantages of this isolation process include critical lithographies on flat surfaces, capacitance reduction, and compatibility with thick collector layers. 1.5 × 10 μm² HBT devices, grown by MOCVD, exhibit an F_max of 120 GHz.

Keywords

CRITICAL LITHOGRAPHIES
MAXIMUM FREQUENCY OF OSCILLATION
CAPACITANCE REDUCTION
ALGAAS-GAAS
MICRO-AIRBRIDGE ISOLATION
THICK COLLECTOR LAYERS
120 GHZ
DEEP WET ETCHING
SELF ALIGNED HBT
MOCVD
HIGH SPEED HBT FABRICATION

This publication has 0 references indexed in Scilit: