Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD

1 February 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (2) , 101-103
https://doi.org/10.1109/EDL.1986.26308

Abstract

It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.

Keywords

CHARGE CARRIER LIFETIME
GALLIUM ARSENIDE
MOCVD
SCHOTTKY DIODES
SEMICONDUCTOR DIODES
DOPING
EPITAXIAL LAYERS
SUBSTRATES
LATTICES
ATOMIC LAYER DEPOSITION

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