Minimum size ROM structure compatible with silicon-gate E/D MOS LSI

• 1 June 1976
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
• Vol. 11  (3) , 360-364
• https://doi.org/10.1109/jssc.1976.1050736

Abstract

Keywords

• SILICON GATE
• MEMORY CELL
• COMPATIBLE WITH SILICON
• ROM STRUCTURE
• LSI
• OXIDE SEMICONDUCTOR
• LARGE SCALE INTEGRATION
• METAL OXIDE