Summary of the Fourth International Conference on Ion Implantation: Equipment and Techniques

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 30 (2) , 1693-1696
https://doi.org/10.1109/tns.1983.4332617

Abstract

On September 13-17, 1982, the Fourth International Conference on Ion Implantation: Equipment and Techniques, was held in Berchtesgaden, Germany. Seventy-seven invited and contributed papers in the fields of ion-implantation equipment (ion sources, high-current implanters for metals and semiconductors, beam scanners, wafer cooling, wafer transport, etc.), equipment testing (dosimetry, voltage calibration, etc.), special measuring techniques for implanted layers, as well as applications of ion implantation to semiconductors and metals, were presented. In addition, a school on problems concerning the use of ion implantation was held. This paper summarizes the various presentations.

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