Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures

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Abstract
Magnetoresistance of a two-dimensional electron gas in Si- and non-doped InAs/AlGaSb quantum wells was measured for a wide range of temperature. At low temperatures, the Shubnikov-de Haas (SdH) oscillation was observed for both samples, and the Fourier analysis of the SdH oscillation reveals that electrons are populated in two subbands for the Si-doped sample, while only the lowest subband is occupied in the non-doped sample. At high temperatures, a weak oscillation with a fundamental field of T was observed in the non-doped sample, which is attributed to the magnetophonon resonances (MPR). For the Si-doped sample, on the other hand, combined oscillations of magnetoresistance due to the magnetophonon and the magneto-intersubband-scattering (MIS) effects were observed.