Surface mobility of C60 on SiO2

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Abstract
The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam‐mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary steps of sticking, desorption, and long‐range surface diffusion. Surface diffusion coefficients determined in this measurement indicate that surface C60 nanoclusters approach two‐dimensional gas‐like behavior. The sticking probability of C60 clusters on SiO2 is determined to be unity. The best fit desorption rate constant kd for C60 from SiO2 is 5×1010 exp(−23 kcal/mol/RT) in agreement with previous temperature programmed desorption experiments. The efficiencies of electron impact ionization of C60 to C60+ and C60++ is measured for electron energies from 10 to 105 eV for neutrals at 875 K.