Ordered Superstructure of InSb-IV
- 2 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (1) , 106-109
- https://doi.org/10.1103/physrevlett.74.106
Abstract
The crystal structure of InSb phase IV has been determined at 5 GPa using angle-dispersive powder-diffraction techniques. The proposed solution is a site-ordered orthorhombic superstructure, spacegroup , composed of six NaCl-like planes stacked along the axis and alternately displaced approximately . Two of the planes are flat, and the others are slightly puckered due to a small relative displacement of the In and Sb atoms along the axis. The results add a remarkably complex example to growing evidence that (generally much simpler) -type structures are common to most of the more ionic II-VI and III-V semiconductors under pressure.
Keywords
This publication has 11 references indexed in Scilit:
- High-Pressure Powder Diffraction on Synchrotron SourcesJournal of Synchrotron Radiation, 1994
- Crystal structure of ZnTe III at 16 GPaPhysical Review Letters, 1994
- New Structural Results for the High-Pressure Phases of InSbJapanese Journal of Applied Physics, 1993
- Phase transitions in InSb at pressures up to 5 GPaPhysical Review B, 1993
- Theory of the structure of high-pressure GaAs IIPhysical Review B, 1989
- High-pressure phases of III-V zinc-blende semiconductorsPhysical Review B, 1987
- Polymorphism and the crystal structures of InSb at elevated temperature and pressureJournal of Applied Physics, 1978
- High-Pressure Physics: Sustained Static Generation of 1.36 to 1.72 MegabarsScience, 1978
- The P-T Phase Diagram of InSb at High Temperatures and PressuresJournal of Applied Physics, 1969
- Anomalous dispersion corrections computed from self-consistent field relativistic Dirac–Slater wave functionsActa Crystallographica, 1965