Characteristics and readout of an InSb CID two-dimensional scanning TDI array

1 August 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (8) , 1599-1607
https://doi.org/10.1109/T-ED.1985.22169

Abstract

In this paper, we describe a 16 × 64 InSb CID 2-D array using a concentric gate structure and planar processing designed for scanning TDI applications. An in-depth analysis of the physical mechanisms of the charge-injection device and a simplified dual-gate CID readout modeling based on a piecewise linear approximation are discussed. Excellent array performance was measured using the sequential-row-inject (SRI) readout scheme in its simplest form. Good dual-gate coupling and charge transfer demonstrate the feasibility of the ideal mode operation. The empirical results are also in agreement with the calculations predicted by the readout modeling and analysis using the material and device parameters.

Keywords

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