A Monte Carlo simulation study for adatom migration and resultant atomic arrangements in AlxGa1−xAs on a GaAs(001) surface
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 82-83, 208-213
- https://doi.org/10.1016/0169-4332(94)90218-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Ga adatom diffusion on an As-stabilized GaAs(001) surface via missing As dimer rows: First-principles calculationApplied Physics Letters, 1992
- First-principles calculation of the migration energy of a Ga adatom on an As-stabilized GaAs(001) surfaceApplied Surface Science, 1992
- Monte Carlo simulation of MBE growth of the 2 × 4 reconstructed GaAs(001) surfaceJournal of Crystal Growth, 1991
- Growth kinetics simulation of the Al-Ga self-organization on GaAs(100) stepped surfacesSurface Science, 1991
- The influence of surface structure on growth of Si(001)2 × 1 from the vapor phaseSurface Science, 1990
- Stochastic simulation of molecular-beam epitaxial growth of a model compound semiconductor: Effects of kineticsPhysical Review B, 1989
- Anisotropic surface migration of Ga atoms on GaAs (001)Journal of Crystal Growth, 1989
- Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEJournal of Crystal Growth, 1987
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985