Transmission electron microscopy and Auger electron spectroscopy studies of boron implanted silicon single crystals
- 16 December 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (2) , 545-553
- https://doi.org/10.1002/pssa.2210680225
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The transmission electron microscope image contrast of epitaxial interfaces with small misfitsThin Solid Films, 1979
- Quantitative Auger analysis of ion-implanted boron and arsenic in polycrystalline siliconSurface Science, 1976
- Diffusion in SemiconductorsPublished by Springer Nature ,1975
- Depth distributions of defects and impurities in 100-keV B+ ion implanted siliconJournal of Applied Physics, 1973
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969