AVALANCHE AND TUNNELING BREAKDOWN MECHANISMS IN HEMT'S POWER STRUCTURES

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Abstract
The present paper reports a study on the breakdown phenomenon in AlGaAs/GaAs power HEMT'S. It uses, on one hand, experimental results carried out on various test devices and, on the other hand, modeling taking into account either ionization or tunneling effects. Such an approach gives a new understanding on the respective roles of these two effects in the breakdown occurrence and allows to define design rules

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