Transient capacitance measurements on resistive samples
- 1 June 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (6) , 2907-2910
- https://doi.org/10.1063/1.332492
Abstract
Peculiar features of Deep Level Transient Spectroscopy (DLTS) measurements on resistive samples are pointed out. Depending on the value of the sample resistance in series with the diode capacitance, the DLTS signal can be strongly reduced and even its sign may be reversed, entailing a possible confusion between majority and minority carrier traps. Means of detecting these effects are discussed and a correction procedure is proposed, based on varying the circuit impedance by means of an additional resistance in series with the sample. Illustrative examples include ion implanted silicon and the case of a germanium bicrystal.This publication has 2 references indexed in Scilit:
- Transient-Capacitance Measurement of the Grain Boundary Levels in SemiconductorsPhysical Review Letters, 1982
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974