Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots
- 20 August 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (8)
- https://doi.org/10.1063/1.2773958
Abstract
The built-in strain in self-assembled quantum dots has large impact on their physical properties, but both its average value and degree of anisotropy are often unknown. The authors demonstrate that the pressure coefficient of optical phonons might be used as probe for the strain status of the dots. This method was applied to the case of Ge dots capped with Si layers of different thicknesses. The authors observe a transition from a strictly biaxial stress situation for uncapped dots to a status of quasihydrostatic strain for cap-layer thicknesses larger than a critical value of the order of the dot height.Keywords
This publication has 19 references indexed in Scilit:
- Analysis of strain and intermixing in single-layerquantum dots using polarized Raman spectroscopyPhysical Review B, 2006
- Depth profile of strain and composition in Si∕Ge dot multilayers by microscopic phonon Raman spectroscopyJournal of Applied Physics, 2005
- Structural properties of self-organized semiconductor nanostructuresReviews of Modern Physics, 2004
- Polarized Raman spectroscopy of multilayer Ge∕Si(001) quantum dot heterostructuresJournal of Applied Physics, 2004
- Raman characterization of strain and composition in small-sized self-assembled Si/Ge dotsPhysical Review B, 2003
- Pressure-induced resonant Raman scattering in Ge/Si islandsApplied Physics Letters, 2002
- Theory of Quantum Dot LasersPublished by Springer Nature ,2002
- Phonons, Strains, and Pressure in SemiconductorsPublished by Elsevier ,1998
- Phonon strain-shift coefficients ofgrown on Ge(001)Physical Review B, 1996
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984