p-CuGa1-xInxS2/n-ZnSe Heterojunction by LPE Method from In Solution

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Abstract
P-CuGa1-x In x S2/n-ZnSe heterojunction was made by the LPE method from the In solution of solute CuGaS2 and solvent In, though a p-CuGaS2/n-ZnSe heterojunction was not obtained. The reflection electron diffraction pattern from the interface indicates an epitaxial growth. The measurements of EPMA have shown that Zn and Se decrease monotonically, and Cu, Ga and S increase monotonically, from the substrate to the over-growth layer. Indium from the solvent showed a monotonic increase from the substrate to the over-growth layer. The maximum temperature T m of 650°C and cooling rate of 0.5°C/min were taken. The epitaxial layer is represented by the formula CuGa1-x In x S2, where x was 0.16 for T m of 650°C. It is suggested that a complete series of solid solutions (CuGa1-x In x S2)1-y -(2ZnSe) y alloys is formed. The thickness of the mixedcrystal layer was 4.9 µm.

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