Gold as an optimal recombination center for power rectifiers and thyristors
- 31 December 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 1033-1036
- https://doi.org/10.1016/0038-1101(77)90218-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Experimental verification of the Shockley–Read–Hall recombination theory in siliconElectronics Letters, 1973
- Thermal and optical generation current in reverse-biased gold-doped silicon p+n junctions without the depletion approximationJournal of Applied Physics, 1973
- Double injection in semiconductors heavily doped with deep two-level trapsSolid-State Electronics, 1970
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- Double Injection in InsulatorsPhysical Review B, 1962