Secondary Reconstruction on the Si(100) Surface via a Charge-Density Wave
- 23 February 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 36 (8) , 450-452
- https://doi.org/10.1103/physrevlett.36.450
Abstract
A pair of partially occupied surface-state bands found in recent calculations by the authors for the 2 × 1 reconstructed Si(100) surface is shown to provide a mechanism for additional reconstruction via charge-density-wave formation. This is proposed as an explanation of weak fourth-order reflections seen in low-energy electron diffraction.Keywords
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