Transient behavior of high-field domains in bulk semiconductors

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (9) , 1615-1616
https://doi.org/10.1109/PROC.1967.5913

Abstract

A simple formula giving the growth rate of high-field domains in bulk semiconductors is derived. When the diffusion constant is small, it reduces to an extension of the equal-area law discussed by Butcher et al.

Keywords

CATHODES
POISSON EQUATIONS
CURRENT DENSITY
ELECTRON MOBILITY
ANODES
VOLTAGE
CONDUCTORS
TRANSIENT ANALYSIS
DIELECTRIC CONSTANT
CONDUCTING MATERIALS

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