Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films
- 1 October 2001
- journal article
- research article
- Published by Taylor & Francis in Molecular Crystals and Liquid Crystals
- Vol. 371 (1) , 397-402
- https://doi.org/10.1080/10587250108024768
Abstract
Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.Keywords
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