Formation of SiH bonds when SiO is deposited on alumina
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 70 (9) , 4288-4290
- https://doi.org/10.1063/1.438003
Abstract
Thin films of silicon monoxide have been deposited on alumina surfaces and examined by inelastic electron tunnelingspectroscopy. A strong absorption peak at 2210 cm−1 reveals the formation of SiH bonds in the presence of trace amounts of water. It is inferred that a reaction between SiO and –OH groups to yield SiH bonds is catalyzed by the alumina surface.Keywords
This publication has 10 references indexed in Scilit:
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Silicon Monoxide Thin FilmsJournal of the Electrochemical Society, 1976
- A new approach to high resolution measurements of structure in superconducting tunneling currentsReview of Scientific Instruments, 1974
- Silicon Monoxide: Fact or FictionVacuum, 1970
- Matrix Isolation Studies of Group-IV Oxides. I. Infrared Spectra and Structures of SiO, Si2O2, and Si3O3The Journal of Chemical Physics, 1969
- Reactions and structures of matrix-isolated SiO species at low temperatures from infrared spectraInorganica Chimica Acta, 1969
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965
- A Study of Amorphous SiOThe Journal of Physical Chemistry, 1959
- Mass Spectrometric Study of Gaseous Species in the Si-SiO2 SystemThe Journal of Chemical Physics, 1955
- Preparation, Structure, and Applications of Thin Films of Silicon Monoxide and Titanium DioxideJournal of the American Ceramic Society, 1950