Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- 15 June 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 1, No) , 3328-3332
- https://doi.org/10.1143/jjap.42.3328
Abstract
Boron doped microcrystalline silicon (p-µc-Si) films were successfully deposited by the Hot Wire Cell method using a gas mixture of pure silane (SiH4) and diborane (0.5% B2H6 in H2). The influence of various deposition parameters on the structural and electrical properties of the films was investigated to obtain highly conductive p-µc-Si films. A high dark conductivity (σd) of 84.6 S/cm and a low activation energy of 0.02 eV were achieved for 550-nm-thick films. For thin films with a thickness of 15 nm, a σd of 4×10-2 S/cm was obtained. The thin p-µc-Si was incorporated into p–i–n amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) solar cells, in which intrinsic layers were deposited by photo chemical vapor deposition (photo-CVD). The initial conversion efficiencies of 9.04% and 6.17% were obtained for a-Si and µc-Si solar cells, respectively.Keywords
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