Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation

10 April 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (8) , 428-429
https://doi.org/10.1049/el:19860292

Abstract

Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7×10⁴ h at 75% of the maximum CW output power.

Keywords

RELIABILITY
SEMICONDUCTOR LASER
HIGH-POWER OPERATION
CW OUTPUT POWERS
GAINASP-INP LASER
MEDIAN LIFETIME
AGEING TEST
V-GROOVED INNER-STRIPE LASER DIODES

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