Fabrication of surface-channel charge-coupled devices with ultralow density of interface states
- 15 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8) , 737-739
- https://doi.org/10.1063/1.93660
Abstract
Surface-channel charge-coupled devices (CCD’s) have been fabricated with ultralow density of (fast) interface states in the range 1–3×108/cm2 eV. This low interface state density is achieved by hydrogen implantation into the metal-nitride-oxide-silicon (MNOS) insulator structure of the CCD as the final fabrication step after aluminum interconnect metallization. The CCD’s are shown to have excellent operating characteristics including high transfer efficiency (∼0.99995 without bias charge), low dark current (0.25–0.50 nA/cm2 at 20°C), and high signal charge capacity (1.55×1012 e/cm2 for 10-V clock swing).Keywords
This publication has 4 references indexed in Scilit:
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