TRANSIENT CHARACTERISTICS OF SEMICONDUCTING GLASS DIODES
- 1 March 1971
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (5) , 198-200
- https://doi.org/10.1063/1.1653622
Abstract
The transient characteristic of a semiconducting glass diode is analyzed on the basis of a model in which a filamentary plasma with high conductivity travels through the diode from one electrode to the other. The switching mechanism is well explained in terms of the travel of this injected plasma. The predicted characteristics of the model exhibit good agreement with experimental results in a Ge2SeTe7 amorphous semiconductor.Keywords
This publication has 8 references indexed in Scilit:
- SIMPLE TEST FOR DOUBLE INJECTION INITIATION OF SWITCHINGApplied Physics Letters, 1970
- Model for the Resistive-Conductive Transition in Reversible Resistance-Switching SolidsJournal of Applied Physics, 1970
- Physics of Instabilities in Amorphous SemiconductorsIBM Journal of Research and Development, 1969
- Characteristics of Semiconducting Glass Switching/Memory DiodesIBM Journal of Research and Development, 1969
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- FILAMENTARY CONDUCTION IN SEMICONDUCTING GLASS DIODESApplied Physics Letters, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Hall effect measurement in semiconducting chalcogenide glasses and liquidsBritish Journal of Applied Physics, 1967