Highly efficient crossing structure for silicon-on-insulator waveguides

Abstract
A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2dB and crosstalk and reflection losses below 40dB in a broad bandwidth of 20nm. Furthermore, the resulting crossing structure has a footprint of only 6×6μm2 and does not require any additional fabrication steps.
Funding Information
  • European Space Agency (19785/06/NL/PA)
  • Spanish Ministerio de Ciencia e Innovación (MICINN) (TEC2008-06360 TEC2008-06333)