Band-structure engineering for low-threshold high-efficiency semiconductor lasers

27 February 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (5) , 249-250
https://doi.org/10.1049/el:19860171

Abstract

It is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated. The band-structure requirements are discussed generally and might be achieved by alternative methods.

Keywords

III-V SEMICONDUCTORS
BAND-STRUCTURE
THRESHOLD CURRENT-REDUCTION
INTERVALENCE BAND ABSORPTION
STRAINED-LAYER SUPERLATTICE
LOW-THRESHOLD
SEMICONDUCTOR LASERS
HIGH-EFFICIENCY
ELECTRON-HOLE RECOMBINATION REDUCTION
QUANTUM-WELL LASER
AUGER RECOMBINATION

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