Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
- 1 July 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (7) , 790-791
- https://doi.org/10.1143/jjap.7.790
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The Substrate Orientation Effect on Impurity Profiles of Epitaxial GaAs FilmsJournal of the Electrochemical Society, 1966
- Vapor Growth Parameters and Impurity Profiles on N-Type GaAs Films Grown on N[sup +]-GaAs by the Hydrogen-Water Vapor ProcessJournal of the Electrochemical Society, 1966
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962