The effect of dopant elements on the structure and high temperature creep behaviour of tungsten and molybdenum wires

Abstract
The influence of minor additions of dopant elements on the recrystallization, grain growth and creep behaviour of both tungsten and molybdenum wires has been investigated. Microstructural examinations were conducted by light and by transmission electron microscopy and the creep behaviour evaluated through the use of resistively heated specimens possessing a helical coil geometry. The wires were processed from sintered ingots by swaging and drawing to the final size of 0.195 mm. Tungsten and molybdenum were examined in the pure state, and also in wires doped with small additions of aluminium, potassium and silicon (AKS) and thoria. In the AKS materials the total dopant concentration was approximately 100 pg/g and in the thoriated tungsten 0.58 % by mass.

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